The TS16MSS64V6G is a16M bit x 64 Synchronous DynamicRAM high-density memory module.The TS16MSS64V6Gconsists of 4piece of CMOS 16Mx16bits SynchronousDRAMs
in TSOP-II 400mil packages and a 2048bits serial EEPROM ona 144-pin printed circuit board.The TS16MSS64V6G is a DualIn-Line Memory Moduleand isintended for mounting into
144-pinedge connector sockets.
Synchronousdesign allows precisecyclecontrolwith the use ofsystemclock. I/O transactionsarepossible oneveryclock cycle.
Range of operation frequencies, programmable latencies allowthe same device to be usefulfor a varietyof high bandwidth, highperformance memory system applications.
Features•RoHS compliant products.
•Performance Range:PC133.
•Burst ModeOperation.
•Auto and Self Refresh.
•Serial Presence Detect (SPD) withserial EEPROM •LVTTL compatible inputs and outputs.
•Single 3.3V+0.3V powersupply.
•MRS cycle with address key programs.Latency (Access from column address)
Burst Length(1,2,4,8 & Full Page)
Data Scramble(Sequential& Interleave)•All inputs are sampled at the positive going edge of the systemclock